Abstract
The angular dependence of the lateral growth rate as a function of crystal growth temperature (Tg) was determined for the liquid phase epitaxy (LPE) of (001) and (111)A,B InP. Low temperature LPE growth of InP was performed at constant growth temperatures between 330°C and 490°C. Post-growth variations in the shapes of pre-formed mesa structures show that lateral growth rates exhibit strong anisotropy in the [110] direction at low growth temperatures (Tg < 400°C) on InP (001) surfaces. This implies that the kink-step density is highest in the [110] direction on InP (001). On InP (111)B surfaces, the maximum lateral growth rate occurred at Tg = 450°C in the 〈112〉 direction, indicating that the kink-step density was highest in this direction. However, at Tg = 450°C the lateral growth rate shows isotropic tendencies on (111)A surfaces, and the anisotropy decreases as the growth temperature increases.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
