Thick (~1 μm) p‐type InxGa1–xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)

Abstract

This paper reports the post‐growth annealing effects of low‐temperature grown Mg‐doped InGaN. By using MOVPE, 1 μm‐thick Mg‐doped InxGa1–xN (x ~ 0.36) films are grown at 570 °C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650 °C for 20 min, the InGaN film is phase‐separated. On the other hand, the RTA at a temperature higher than 700 °C enables us to get p‐type samples. By using the RTA at 850 for 20 s, p‐type samples with a hole concentration 1018–1019 cm−3 are successfully obtained without phase separation.