Abstract
We calculate the thermostimulated conductivity(TSC) in amorphous semiconductors with non-exponential density of localized states (DOS) that has been obtained from the measurements of the field-effect by Weisfield et al. The calculated results are compared with the case of exponential density of localized states. It turns out that the low-T-peak in the TSC becomes higher than the high-T-peak when the non-exponential DOS is rapidly increased in the high energy region. Except for this point, the profile of TSC in these two cases does not exhibit substantial difference, but the results are quantitatively different.
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