Abstract
Abstract The theory of thermostimulated conductivity (TSC) in amorphous semiconductors containing a continuous distribution of localized gap states is discussed. We find that neither the low- nor the high-temperature TSC peaks are caused by peaks in the energy dependence of the density of gap states g(E). The theory is compared with TSC experiments on hydrogenated amorphous silicon. Values for the mobility-lifetime density of states product are obtained.
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