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Cite Journal: RSC Advances |  Publication Date: Jan 1, 2015 |
 Citations: 38 |  License type: other-oa |
We report for the first time the thermoresistive property of p-type single crystalline 3C–SiC (p-3C–SiC), which was epitaxially grown on a silicon (Si) wafer, and then transferred to a glass substrate using a Focused Ion Beam (FIB) technique.
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