Abstract
Based on the principle of thermoreflectance (TR) and experimental data, we have determined the TR coefficients of GaN in the visible and near-ultraviolet spectrum range. The results indicate that the TR coefficient of GaN is larger, approximately 10−3K−1 when the illumination wavelength falls within the near-ultraviolet range. However, within the visible spectrum, the TR coefficient is low, ranging between 10−5K−1 to 10−6K−1. This suggests that GaN is more responsive to temperature changes within the near-ultraviolet spectrum. The paper provides a physics-mechanism-based explanation for this phenomenon. These results have implications for the thermal design and analysis of GaN-based microelectronic devices.
Published Version
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