Abstract

Thermomechanical stress due to tensile and compressive strain is a critical aspect in packaging technology. Residual thermomechanical stress due to large difference in coefficients of thermal expansion between materials generates reliability problems not only at the bonded interfaces but also for the lifetime of the active regions of high power semiconductors. Raman spectroscopy is a non-destructive method to investigate the residual stress in semiconductors. Blue LEDs based on gallium nitride bonded to a silicon carrier by a gold layer were soldered with eutectic gold-tin solder on a copper substrate. The bond line thickness was varied by application of a bond force between 0 and 21 N and the thickness of the copper substrate was chosen between 1 and 0.2 mm. The Raman shift of the E_2

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