Abstract
In this work the comparative analysis of thermoluminescent properties of undoped and Ce-doped single crystals (SC) and single crystalline films (SCF) of Lu2SiO5 (LSO) and Y2SiO5 (YSO) orthosilicates were performed. The SC samples were prepared with the Czochralski method, and SCF were grown by the liquid phase epitaxy technique. We show that such different methods of material preparation resulted in different thermoluminescent properties of undoped and Ce3+ doped LSO and YSO SC and SCF caused by the presence host defects (first of all, oxygen vacancies) as trapping centers in SC and formation of Pb2+-Ce4+ pair centers in SCF.
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