Abstract
The SiC nanocomposite Mg2(Si0·4Sn0.6)Sb0.015/(y)SiC (0 ≤ y ≤ 0.01) with Sb doping were prepared using the vacuum induction levitation melting technique in conjunction with mechanical alloying and spark plasma sintering process. The microstructure and thermoelectric properties were systematically investigated. The hierarchical nanostructures for the samples are composed of point defects, SiC nanocomposite particles, coherent in-situ nanophases, and grains. The SiC nanocomposite cause a minor reduction in electrical performance, and the constructed hierarchical nanostructures significantly decreased the lattice thermal conductivities. The highest figure of merit value of 1.55 is obtained at 643 K for the y = 0.0075 SiC nanocomposite sample.
Published Version
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