Abstract
By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor working in sequential regime are investigated using our homemade simulator that self-consistently couples the 3D Poisson, Schrodinger and Master equations. At high voltage bias, the multi-level effects are shown to induce non-linear characteristics of the heat current. Additionally, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
