Abstract
The electrical properties of n-BP films newly prepared by thermal CVD in the B 2H 6–PH 3–H 2 system were improved by a deuterium lamp excitation. High-temperature electrical conductivity and thermoelectric power of amorphous boron and polycrystalline boron phosphide films grown on silica glass were measured to evaluate the thermoelectric figure-of-merit ( Z). In particular, the Z-value for photo-thermal BP films was higher (10 −4/K) than that of boron films, indicating that they are promising for high-temperature thermoelectric materials.
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