Abstract

Epitaxial growth of boron phosphide (BP) films on 4H- and 6H-SiC(0001) substrates with on- and off-axis orientations was investigated in this study. The films were prepared by chemical vapor deposition using phosphine and diborane as reactants over a temperature range of 1000 oC–1200 °C. The effects of growth parameters such as temperature, reactant flow rates, substrate type, and crystallographic orientation on BP film properties were studied in detail. The epitaxial relationship between BP film and 4H-and 6H-SiC substrate was (111)BP<112¯>BP||(0001)SiC<11¯00>SiC. Film quality, determined by preferred crystalline orientation and grain size, improved with temperature and PH3/B2H6 flow ratio, as indicated by scanning electron microscopy, x-ray diffraction, atomic force microscopy and Raman spectroscopy. In addition, smoother films were obtained when the diborane flow rate was reduced. Rotational twinning in BP films was absent on 4H-SiC(0001) tilted 4° towards [11¯00], but was confirmed on both 4H-SiC(0001) tilted 4° towards [12¯10], and on-axis 6H-SiC(0001) substrates by synchrotron white beam x-ray topography technique.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.