Abstract
The Hall coefficient, electrical conductivity, and thermoelectric power of Ge3Sb2Te6, Ge2Sb2Te5, GeSb2Te4 , and GeSb4Te7were measured over a wide temperature range (RHand σ from 77 to 800 K and Sfrom 90 to 450 K). The carrier concentration was varied via compositional changes within the homogeneity regions of the compounds. All of the materials studied were found to be p-type. Some of the alloys have a low lattice thermal conductivity and are, therefore, candidate p-type thermoelectric materials. The temperature-dependent hole mobility data suggest that both acoustic phonons and point defects contribute to the scattering of charge carriers at low temperatures.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call