Abstract
We studied the thermoelectric properties of NaZn4-xCuxAs3 (x = 0.00, 0.02, 0.04, 0.06) polycrystalline samples below room temperature. The samples were prepared by solid state reactions followed by hot pressing. All samples were crystallized in the rhombohedral space group R3¯m with p-type electrical conduction. Cu substitution for Zn was performed to increase the hole carrier density. They exhibited low lattice thermal conductivities (1.20–1.25 WK−1m−1) at around room temperature. These values were about half of those for previously reported CaAl2Si2-type Zintl phase compounds. Among all samples, the non-doped sample exhibited the highest dimensionless figure of merit (0.067) at around room temperature.
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