Abstract
We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1wt% Te. We investigated the effect of film thickness, substrate temperature and post-annealing duration on the thermoelectric properties of the films. Our results show that the best power factor (2780μW/K2m at 300K) is obtained for films grown at room temperature and then post-annealed in vacuum at 300°C for 16h. This is among the highest power factor values reported for Bi0.5Sb1.5Te3 films grown on fused silica substrates.
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