Abstract
Oriented LiNbO3 thin films have been prepared by pulsed laser deposition on fused silica substrates under a proper low electric field. The as-grown films were characterized by means of X-ray diffraction θ–2θ scans, X-ray photo-electron spectrometry and atomic force microscopy. Significant effects of the substrate temperature and magnitude of the applied electric field on the orientation of the films are revealed, demonstrating the preferred electric field of ∼7 V/cm and substrate temperature of 600°C. Drastic influence of the substrate temperature on the stoichiometry of the thin films is also shown. The as-prepared thin films show quite good surface quality.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
