Abstract
Tin Selenide, Lead Selenide, and Lead Telluride are known best thermoelectric materials for mid and high-temperature electric generation applications. The bilayer of these materials could enhance the quality of a thermoelectric generation. The present work deals with bilayer deposition of SnSe/PbTe and SnSe/PbSe in glass substrates using physical vapor deposition followed by annealing at 323K, 423K, and 523K. The structure and morphology of the films have been investigated by XRD, SEM, and FESEM studies. The thermoelectric pursuance of both bilayer thin films was studied with the temperature as a function in the range of 300K to 623K. Both films exhibit the maximum Seebeck coefficient. The electrical Conductivity and Power factor increased gradually for SnSe/PbTe thin films and SnSe/PbSe thin films for the samples annealed up to 573K and then decreases. The electronic thermal conductivity of both films was very low compared to the total thermal conductivity. The absolute thermal conductivity at room temperature was calculated by Transient Hot Wire (THW) method. The maximum Figure of Merit (ZT) value obtained for SnSe/PbTe and SnSe/PbSe at room temperature was 0.81 and 1.3 for 573K annealed thin films respectively.
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