Thermoelectric properties and durability at elevated temperatures of impurity doped n‐type Mg2Si

Abstract

AbstractThe thermoelectric properties, including the Seebeck coefficient, the electrical and thermal conductivities, and the durability at elevated temperatures, of Co, Sm, Ta, Zn and Sb doped n‐type Mg2Si were studied. In order to optimize the thermoelectric properties of Mg2Si for practical applications, it needs to be doped, and typical device operating temperatures require that any substitutional element used as a dopant be highly stable. Stable impurity elements in Mg2Si are needed to ensure long lifetime operation at elevated temperatures. The results showed that Zn doping gave rise to a decrease in thermal conductivity to a level comparable to Sb doping. In order to examine the effects of double‐doping with these impurities, samples of Mg2Si doped with Sb+Zn, Sb+Al and Sb+Al+Zn, were fabricated using all‐molten polycrystalline synthesis process at 1423 K. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)