Abstract
In4Se3 has recently been found to be a layered compound which shows promising thermoelectric (TE) properties. In the present study, a textured In4Se3-based material grown by the zone melting technique is found to be a composite with elemental indium embedded in the In4Se3 matrix. The TE properties of this composite are evaluated and a maximum figure of merit ZT of 0.9 is achieved in the direction perpendicular to the growth direction. Such a result should provide a useful guidance for composition control towards further ZT enhancement in this material.
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