Abstract
MoS2 has been predicted to be an excellent thermoelectric material due to its large intrinsic band gap and high carrier mobility. In this work, we exfoliated bulk MoS2 by the assistance of lithium intercalation and fabricated the restacked MoS2 thin-film using a simple filtration technique. These MoS2 thin-films with different thickness showed different thermoelectric performance. It was found that with the increase of thickness, carrier concentration, electrical conductivity and Seebeck coefficient all showed an increasing trend. In particular, the maximum Seebeck coefficient was able to reach 93.5 μV K−1. This high thermopower indicates that MoS2 will have ideal thermoelectric performance in the future through optimizing its structure. The highest figure of merit (ZT = 0.01) is calculated in this experiment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.