Thermoelectric Performance of 2D Tellurium with Accumulation Contacts.

Abstract

Tellurium (Te) is an intrinsically p-type-doped narrow-band gap semiconductor with an excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with a high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing the synthesis route of 2D tellurium thin films as well as the growing trend of exploiting nanostructures as thermoelectric devices, here for the first time, we report the excellent thermoelectric performance of tellurium nanofilms, with a room-temperature power factor of 31.7 μW/cm K2 and ZT value of 0.63. To further enhance the efficiency of harvesting thermoelectric power in nanofilm devices, thermoelectrical current mapping was performed with a laser as a heating source, and we found that high work function metals such as palladium can form rare accumulation-type metal-to-semiconductor contacts to Te, which allows thermoelectrically generated carriers to be collected more efficiently. High-performance thermoelectric Te devices have broad applications as energy harvesting devices or nanoscale Peltier coolers in microsystems.