Abstract
Zero-biased-point contact Schottky-barrier diodes operating as detectors of 10 µm radiation are analyzed. It is found that a themioelectric process is responsible for the detected voltage observed experimentally. This process dominates all other detection mechanisms due to the high thermoelectric power coefficient of semiconductors. The time constants associated with the process are of the order of 0.4 µs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
