Thermoelastic switching with controlled actuation in VO 2 thin films

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Reversible stress switching across the thermally triggered phase transition in vanadium dioxide thin films grown on silicon has been investigated using in situ wafer curvature measurements. Stability of the recoverable stress, hysteresis width and the transition temperature over 100 cycles are studied. Fine control over the recoverable stress has been demonstrated by thermal arrest across the phase boundary, exploiting the incomplete martensitic transition. Stability of the fractional stress changes across the martensitic transition is reported at various temperatures.