Abstract
Thermodynamic analyses on tri-halide vapor-phase epitaxy (THVPE) of GaN and In x Ga 1− x N using GaCl 3 and InCl 3 are described. The partial pressures of gaseous species in equilibrium with GaN and In x Ga 1− x N and the driving force for the deposition are calculated for growth temperature and the hydrogen mole fraction in the carrier gas. It is shown that the deposition of GaN and In x Ga 1− x N is significantly influenced by the hydrogen mole fraction in the carrier gas. The vapor-solid distribution relationship of In x Ga 1− x N alloy deposition using GaCl 3 and InCl 3 is discussed in comparison with the experimental data reported in the literature. It is shown that the solid composition x in In x Ga 1− x N is thermodynamically controlled.
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