Abstract
Thermodynamic analysis of the defective processes in iodine-doped cadmium telluride are presented. By the thermodynamic potentials method calculated concentration according of free charge carriers and prevailing point defects in CdTe:I crystals from process parameters of two- temperature annealing. Established its own type of dominant point defects that determine electrical properties of the material. Shown that compensatory model except substitution defects Te I + , their complexes with intrinsic point defects 2 ( ) V I Cd Te −+− , 2 0 ( 2) V I Cd Te − + also considers the formation of DX– -centers.
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