Abstract
The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd 1− x Zn x Te as obtained by electron paramagnetic resonance and related techniques is reviewed. Special attention will be paid to the properties of intrinsic defects such as vacancies (V Cd and V Te) and complexes formed with dopants (A centres: V Cd-donor, and donor-V Cd-donor complexes). In view of the high resistive material required for X- and γ-ray detector applications such defects seem to play an important role.
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