Thermodynamical Analysis of the Formation of α-Si Ring Structures on Silicon Surface

Abstract

Superficial modifications on silicon wafers produced by single-shot focused femtosecond laser irradiation having a 1030 nm wavelength and 300 fs pulse duration were experimentally and theoretically analyzed. The laser fluence window when the amorphous silicon phase develops, resulting in a ring-like modification shape, was experimentally estimated to be between 0.26 J/cm2 and 0.40 J/cm2 and was independent of the silicon dopant type and laser focusing conditions; however, the window was narrower when compared to results reported for shorter pulse durations. In addition, we present a simplified numerical model that can explain and predict the formation of these patterns based on the caloric coefficients of silicon and the energy distribution of the deposited material.