Abstract
Reflection high energy electron diffraction (RHEED) is used to monitor the two-step desorption of oxides on InAs(001) surface in the vacuum chamber, and the high temperature indium-assisted desorption processes of surface oxides under high arsenic pressure and low arsenic pressure are compared. The first step of two-step deoxidation method for InAs substrate is to heat the substrate slowly at high temperature. The second step is high temperature indium beam-assisted desorption of surface oxides. The RHEED patterns of sample at high temperature desorption of oxides show that the high temperature indium beam-assisted desorption of InAs surface oxide method could eventually clear residual oxide that the traditional slow heating method cannot remove. The scanning tunneling microscope images of sample after homogeneous epitaxial growth prove the viability of high-heat indium beam-assisted desorption of InAs surface oxide under high arsenic pressure. Finally, we analyse the mechanism of high-heat indium beam assisted desorption of surface oxides of substrate.
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