Abstract
Thermodynamic analyses were carried out to understand influence of lattice constraint from GaN and InN substrates on relationship between solid composition x of In x Ga 1− x N films and input mole ratio R In (= P In 0/( P In 0+ P Ga 0) where P i 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculated results suggest that compositional unstable region is found at small R In region for InGaN on InN while that for InGaN on GaN can be seen at large R In region at higher temperatures. This implies that InN-rich thin films are possible to form on InN substrate though it is difficult to form on GaN substrate.
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