Abstract
This work describes the thermodynamic simulation and the experimental investigation of the chemical vapor deposition of silicon oxide and silicon oxynitride films starting from tetra-ethyl-orthosilicate (TEOS), dichlorosilane (DCS) and ammonia mixtures. The simulation reveals that nitrogen incorporation in the deposited films is possible at 710 °C and 300 mTorr at DCS/TEOS flow ratios above unity. For DCS/TEOS flow ratios less than unity, the deposited films are exclusively composed of silicon dioxide. These predictions were confirmed with Fourier Transform Infrared spectroscopy, X-ray Photoelectron Spectroscopy, Auger Electron Spectroscopy and Electron Energy Loss Spectroscopy measurements.
Published Version
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