Abstract
Silicon tellurides are being considered for next generation non volatile memory material due to their large variation of electrical resistances during phase change. For the applications of these materials in electronic devices, it is necessary to have information on their thermodynamic stabilities. The phase diagram of the binary Si-Te system indicates the existence of two crystalline phases viz., Si2Te3 and SiTe2. Si2Te3 decomposes into Si(s) and Te2(g) along with small amount of SiTe(g), whereas SiTe2 vaporizes incongruently to Si2Te3(s) and Te2(g). The phase fields for the vaporization reactions for Si2Te3 and SiTe2 compounds have been established by thermal analysis and XRD techniques. Vapor pressures of the tellurium bearing species over the bi-phasic mixtures (Si2Te3-Si and SiTe2-Si2Te3) have been measured employing Knudsen effusion mass loss technique. Standard Gibbs energy of formation of Si2Te3 and SiTe2 compounds has been derived from the vapor pressure data.
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