Abstract
We have performed calculations to evaluate the thermodynamic stability of film and its effect on film quality when it is deposited on thin film by metallorganic chemical vapor deposition. is rather stable when it is annealed in oxygen ambient. However, it was etched by gaseous oxygen when too much oxygen was fed at high temperatures. The degradation of occurs in two different reaction pathways depending on process conditions. One is the thermal decomposition of that mainly happens when no excess is present in the feed at low pressures. The other is the etching of film by excess which produces gaseous and species. The calculation results on the Ba-Sr-Ti-Ru-C-H-O system also present optimal feed composition and process conditions that result in high-quality film. © 2001 The Electrochemical Society. All rights reserved.
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