Abstract
Impurity depth profiles were obtained by differential sheet resistivity and Hall coefficient measurements on Si(100) implanted with indium to doses of 10 13 and 10 14 ions cm -2 at an energy of 190 keV. After recovery of the implant damage the samples were diffused in an inert atmosphere at temperatures ranging from 1000 to 1200 °C. The data show that the carrier concentration is nearly independent of the implanted dose, while the indium diffusivity in silicon is higher for the samples implanted at 10 14 ions cm -2. The solid solubility of indium in silicon is around 10 17 cm -3. The hole mobility is about half that of boron-doped silicon and, in the range considered, the main contribution to the resistivity is from ionized impurity scattering. A model is proposed to account for the peculiar behaviour observed in indium-implanted silicon.
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