Abstract
Publisher Summary This chapter deals with the technique of carrier profiling by differential sheet resistance and sheet Hall coefficient measurements obtained by anodic stripping. This technique is distinctive because it can measure the carrier concentration and mobility profiles. This method therefore appears to be a complementary characterization tool, compared with the spreading resistance technique, because it provides crucial information about the changes in the scattering mechanisms in ion-implanted semiconductors and their evolutions with the annealing processes. The distinctive feature of this technique is the ability to simultaneously measure carrier concentration and mobility profiles. This feature turns out to be essential every time mobility is affected by some other scattering mechanism in addition to scattering by ionized dopant. Examples of this sort are discussed in the chapter. Mechanisms responsible for mobility reduction have been identified. Point defects (whether intrinsic or extrinsic) are found to be much more effective for mobility reduction than are large extended defects in ion-implanted layers, whereas grain boundaries dominate mobility in polysilicon layers.
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