Abstract
Rutherford backscattering analysis and junction depth and sheet conductivity measurements were used to investigate the recrystallization of indium-implanted Si(100) substrates and their electrical behaviour after annealings up to 800 °C. The data show an initial fast recovery of the implant damage and a high anomalous indium diffusivity. A strong correlation between the substitutionality of indium and the sheet conductivity is found. The observed conductivity decrease with increasing annealing temperature is attributed to the loss of substitutionality by the indium.
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