Abstract
Thermochromic tungsten-doped VO2 thin films were successfully fabricated using a W-V alloy target. X-ray diffraction analyses showed that the W-doped VO2 film had a preferred orientation of (011), and that the doping did not degrade the film crystallinity compared with that of the pure film. X-ray photoelectron spectroscopy and energy-dispersive spectroscopy showed that the doped 0.81 atom% tungsten replaced vanadium in the lattice of the film. The metal–insulator transition temperature of the W-doped VO2 film was reduced to 35.5 °C, which is close to room temperature. Additionally, the infrared transmittance modulation of the W-doped film at λ = 2500 nm reached 56%, indicating an excellent switching efficiency. The damage behavior of the W-doped VO2 film under a femtosecond-laser irradiation was experimentally investigated. Our results revealed that defect-related damages induced by the femtosecond laser are relevant for W-doped VO2 films. This study provides valuable insights into VO2 films for potential applications in laser protection.
Highlights
With the development of the photoelectric detection technology, the effects of high-power lasers on photoelectric detectors have been extensively studied, including high-power-laser-induced damage mechanisms and damage threshold of photoelectric detectors
The phase-transition temperature of the W-doped VO2 film can reach a low value of 35.5 ◦ C, which is near room temperature
It is worth noting that no other impurity peaks can be observed from the X-ray diffraction (XRD) patterns, which indicates the formation of single-phase W-doped
Summary
With the development of the photoelectric detection technology, the effects of high-power lasers on photoelectric detectors have been extensively studied, including high-power-laser-induced damage mechanisms and damage threshold of photoelectric detectors. Protection against high-power lasers using suitable materials has been studied. Advanced laser protection materials are usually based on conventional linear optics [1]. Such protection systems absorb and reflect waves of the same wavelength. The system protects the photoelectric detector from the strong laser; it obstructs the weak waves that carry signals [2]. They do not satisfy the requirements for the development of high-power-laser protection systems
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