Abstract
The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green–Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore–Gibson–Thompson (MGT) equation, are derived by adding a single delay factor to the GN-III model. The impact of temperature and electrical elastic displacement of semiconductors throughout the excited thermoelectric mechanism can be studied theoretically using this model. The proposed model was used to investigate the interactions between the processes of thermoelastic plasma in a rotating semiconductor solid sphere that was subjected to a thermal shock and crossed to an externally applied magnetic field. The influence of rotation parameters on various photothermal characteristics of silicon solid was presented and explored using the Laplace technique.
Highlights
Several developments have been made in the field of ultrafast carrier dynamics in semiconductor materials during the last five decades
If the rotation is about the axial axis of the cylinder, i.e., Ω = (0, 0, Ω), the equation of motion can be expressed in the following terms: the impact of the magnetic field Fr and the force due to the rotation of the body $Ω2 u
We present a numerical example in which we need to derive mathematical solutions for several physical quantities whose behavior is largely influenced by the assumptions stated in the topic
Summary
Several developments have been made in the field of ultrafast carrier dynamics in semiconductor materials during the last five decades. The heat-transmission detection system may be used for a variety of applications, including the assessment of heat propagation mechanisms in solid materials [1] When this approach is used for semiconductors, it is possible to obtain additional information about carrier transport properties [2]. Wave propagation is used in many applications in today’s engineering industries during electro-deformations of elastic semiconductor material [8]. For the first time in this paper, the photothermal MGT heat conduction model (MGTPT), which describes photo-excited carriers and acoustic waves in semiconductors, are introduced. The Moore–Gibson–Thompson (MGTPT) photothermal heat conduction equation is used to investigate effects throughout photothermal processes in an isotropic, homogeneous, thermoelastic semiconductor solid sphere. The findings were compared to the findings of the study conducted by the researchers
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