Abstract
Integrated waveguiding devices based on silicon oxynitride (SiON) are appealing for their relatively high refractive index contrast and broadband transparency. The lack of two photon absorption at telecom wavelengths and the possibility to fabricate low loss waveguides make SiON an ideal platform for on-chip nonlinear optics and for the realization of reconfigurable integrated quantum lightwave circuits. Despite this, very few studies on its linear and nonlinear optical properties have been reported so far. In this work, we measured the thermo-optic coefficient dn/dT and the nonlinear refractive index n2 of relatively high (n ∼ 1.83 at a wavelength of 1.55 μm) refractive index SiON by using racetrack resonators. These parameters have been determined to be dndT=(1.84±0.17)× 10−5 K−1 and n2 = (7 ± 1) × 10−16 cm2W−1.
Highlights
Quantum information science is rapidly developing relying on generation of quantum states of light via emission from quantum dots,[1] colour centres[2] or via frequency conversion mechanisms exploiting material nonlinearities.[3]
Different types of material nonlinearities in Si enable frequency conversion via χ(3)[6] and χ(2),[7] while its thermo-optical coefficient dn/dT allows for efficient tuning of interference in complex photonic devices.[8]
The information carried by the phase is crucial for determining the extrinsic and the intrinsic quality factors, since their values can be exchanged without affecting the resonance linewidth and extinction ratio, which are the only quantities that can be extracted from a measurement of the intensity
Summary
Quantum information science is rapidly developing relying on generation of quantum states of light via emission from quantum dots,[1] colour centres[2] or via frequency conversion mechanisms exploiting material nonlinearities.[3]. Different types of material nonlinearities in Si enable frequency conversion via χ(3)[6] and χ(2),[7] while its thermo-optical coefficient dn/dT allows for efficient tuning of interference in complex photonic devices.[8] important free-carrier and two photon absorption issues, as well as the band-to-band absorption below ∼ 1μm of wavelength, limit the use of Si in several applications.[9,10]. We report on the study of linear (thermo-optic) and nonlinear χ(3) optical properties of relatively high (n ∼ 1.83 at a wavelength of 1.55 μm) refractive index SiON. Si3N4, and a nonlinear refractive index which is nearly three times the one of SiO2. In the this material can be grown to relatively high thicknesses (> 1μm), offering an alternative to the.
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