Abstract
Careful thermally stimulated current experiments were carried out on undoped amorphous hydrogenated silicon. We observe two peaks in the TSC profile, one at 120°K and the other at 300°K. We construct a theoretical framework based on the retrapping mechanism to understand this phenomena. The agreement between experiment and the theoretical prediction is good. In contrast the non-retrapping, high field formulation provides a poor fit to the experiment. We deduce that the density of states (DOS) in the gap has a maxima at 0.45 eV in broad agreement with the results of field effect measurements. Deep level transient spectroscopy (DLTS) measurements, which predict a minima in the DOS at 0.4 eV, find no support from our calculations.
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