Abstract
The evaluation of the copper related complex defects in copper-diffused semi-insulating GaAs was studied using thermally stimulated current (TSC) method. Two new TSC traps, T1 (ionization energy 0.25 eV) and T2 (0.52 eV), are observed. These traps are consistent with two acceptor levels evaluated by van der Pauw method and samples change p as the T2 trap appears with increasing copper content. These results suggest that the shallower T1 trap compensates not only the midgap electron trap (EL2 defect) but also the deep T2 trap. The relative photoionization cross sections, which have a maximum at around 940 nm (1.32 eV) for the T1 trap and at around 1400 nm (0.89 eV) for the T2 trap, respectively, are obtained. Origins of these traps are also discussed.
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