Abstract
Cobalt silicide (CoSi 2) ohmic contacts possessing low specific contact resistivity ( p c < 4.0 ± 0.7 × 10 −6 μ cm 2) to p-type 6HSiC are reported. The contacts were fabricated through sequential electron-beam evaporation of Co and Si layers forming a Si/Co/SiC structure, followed by a two-step vacuum annealing process at 500 and 900°C, respectively. Specific contact resistivities were extracted from transmission line model (TLM) structures at temperatures ranging from 22 to 200°C. p c is investigated as a function of current density, temperature and ageing in a vacuum furnace at 1100°C. Furthermore, comparison with a Co SiC contact structure subjected to an identical annealing process revealed higher p c and a modified sheet resistance requiring a different method of contact parameter extraction.
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