Abstract
A high–temperature–resistant bond withstanding up to 415°C for SiC power devices is realized at 260°C with a Cu/Sn powder paste and an electroless nickel plated Si3N4/Cu circuit substrate. The bond was formed by using transient liquid phase sintering (TLPS). The bond strength tested at 300°C increases with increasing aging time at 300°C, from the original 40 MPa to 50 MPa after aging at 300°C for 200 h. This is attributed to phase transformation from Cu6Sn5 formed during TLPS to Cu3Sn in the bond during aging. We observed an η–(Cu,Ni)6.26Sn5 phase at the interface between the TLPS Cu–Sn bond and Ni(P) layer. The interface between the TLPS Cu–Sn bond and Si3N4/Cu/Ni(P)/Ag substrate exhibits very high stability, characterized by a very slow Ni(P) layer consumption rate and Ni3P growth rate. The TLPS Cu-Sn bond on a 5 μm-thick electroless plated nickel layer is expected to have a life time beyond 105 h during storage at 300°C.
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