Abstract
Thermally reduced graphene oxide/carbon nanotube (rGO/CNT) composite films were successfully prepared by a high-temperature annealing process. Their microstructure, thermal conductivity and mechanical properties were systematically studied at different annealing temperatures. As the annealing temperature increased, more oxygen-containing functional groups were removed from the composite film, and the percentage of graphene continuously increased. When the annealing temperature increased from 1100 to 1400 °C, the thermal conductivity of the composite film also continuously increased from 673.9 to 1052.1 W m−1 K−1. Additionally, the Young’s modulus was reduced by 63.6%, and the tensile strength was increased by 81.7%. In addition, the introduction of carbon nanotubes provided through-plane thermal conduction pathways for the composite films, which was beneficial for the improvement of their through-plane thermal conductivity. Furthermore, CNTs apparently improved the mechanical properties of rGO/CNT composite films. Compared with the rGO film, 1 wt% CNTs reduced the Young’s modulus by 93.3% and increased the tensile strength of the rGO/CNT composite film by 60.3%, which could greatly improve its flexibility. Therefore, the rGO/CNT composite films show great potential for application as thermal interface materials (TIMs) due to their high in-plane thermal conductivity and good mechanical properties.
Highlights
With the development of high-power electrical and electronic products, the heating problem of electronic devices has become increasingly serious; it restricts the lifetime, reliability and future development of electronic components [1,2]
The results showed that Carbon nanotubes (CNTs) can highly improve the interfacial thermal conductance among adjacent graphene layers [26]
The CNT dispersion with a mass of 1 wt% was added to the obtained graphene oxide (GO) dispersion, and the mixture was stirred for 30 min at a mass of 1 wt% was−1added to the obtained GO dispersion, and the mixture was stirred for 30 min at a a speed of 400 r min−1
Summary
With the development of high-power electrical and electronic products, the heating problem of electronic devices has become increasingly serious; it restricts the lifetime, reliability and future development of electronic components [1,2]. The lifetime of transistors can be increased by one order of magnitude when the temperature of the hot spot is reduced by 20 ◦ C [3,4,5,6]. There is only 1–2% physical contact among the components, while the other space is filled with air [9,10,11]. To solve this issue, thermal interface materials (TIMs) are generally used to fill the space to improve the efficiency of heat dissipation.
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