Abstract
We demonstrate the effect of the pre-growth heat treatment process on the nucleationproperties of Ge dots grown on pit-patterned Si(001) substrates. The prefabricated 200 nmdiameter pits inherently evolve into truncated inverted pyramids (TIPs) with⟨110⟩ base edgesand a 7°–9° sidewall slope during heat treatment; this morphology transformation is robust against variationsin shape and orientation of the pit patterns. Uniform Ge dots with an areal density of4 × 109 cm − 2 were obtained on the Si substrates having TIPs. Each TIP containsfour aligned Ge dots locating symmetrically with respect to ⟨110⟩. These dots exhibit an elliptical dome shape with major axis oriented along⟨100⟩. The nucleation position, shape and spatial orientation of these Ge dots coincide with thecalculated surface chemical potential distribution of the TIP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
