Abstract
We study theoretically the electromechanical response of a thin unimorph consisting of a piezoelectric dielectric layer and a nonpiezoelectric semiconductor layer in coupled extension and bending under a uniform temperature change. The macroscopic theory of thermopiezoelectric semiconductors is used. A one-dimensional model is derived, from which an analytical solution is obtained. Numerical calculations show that the mobile charges in the semiconductor layer redistribute themselves under the electric field produced through the combined effects of thermoelastic, pyroelectric and piezoelectric couplings in different layers of the structure. The results are potentially useful for sensing and transduction between thermal and electric fields or currents, as well as thermo-piezotronics.
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