Abstract
Dielectric properties of heat treated in air and in vacuum Na0.5Bi0.5TiO3 single crystals are studied. It is shown, that above 350°C ɛ and tanδ exhibit sufficient temperature hysteresis and strongly depend on AC field frequency and heat treatment conditions. Low frequency dielectric dispersion around 400°C and temperature growth of dielectric loss above 500°C are observed in as grown and heat treated in vacuum samples. Frequency dispersion of ɛ and temperature growth of tanδ strongly diminish after annealing in air. It is supposed that slow relaxing dipolar complexes and mobile structural defects are created by oxygen vacancies.
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