Abstract
The thermal stability of chemical vapor deposited (CVD) Parylene N used as a pore sealant has been evaluated. Parylene N pore sealing is shown to have a thermal stability up to in an Ar-3% forming gas ambient. A thin film of Parylene N remains effective at blocking Co precursor penetration into porous methyl silsesquioxane (MSQ) during the CVD of Co, even after being annealed at temperatures up to . The leakage current improvement of pore sealed MSQ with an Al electrode is also maintained after a anneal. In addition, the thermal stability of thin Parylene N films themselves has been verified up to .
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