Abstract
The process development and characterization of titanium nitride (TiN) as a diffusion barrier for silver (Ag) metallizations were discussed. The structure of Ag/TiN/SiO2/Si and Ag/TiN/Si metallizations under N2/H2 thermal annealing at 300–650 °C were investigated with sheet resistance measurement, X-ray diffraction (XRD), focused ion beam-scanning electron microscopy (FIB-SEM), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) and compared to as-deposited multilayers. For 12 nm TiN barrier, no change of sheet resistance was observed after annealing at 600 °C, but an abrupt rise appeared at 650 °C annealing. FIB-SEM revealed that this is due to the surface morphology change after annealing of the samples at different temperatures and the destruction of the TiN film.
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