Abstract
The thermal stability of thin cobalt silicide layers grown on amorphous silicon deposited by chemical vapor deposition has been studied in the temperature range between 950 and 1100°C. The relation between the agglomeration process and the increase of the sheet resistance has been evidenced. The range of thermal stability of the silicide is reduced if the CVD amorphous silicon is previously implanted with Si ions. The occurrence of some epitaxial CoSi 2 grains in the case of CVD amorphous Si can account for this difference.
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