Abstract
Niobium nitride films were prepared on unheated GaAs substrates by dc reactive magnetron sputtering from a niobium metal target in an Ar + N 2 mixed atmosphere. The nitrogen content in the gas mixture was varied from 2–20%, and the structural and electrical characteristics of the deposited thin NbN Schottky contacts to GaAs studied under high-temperature annealing (with annealing temperatures ranging from 850–950 °C). Using several characterisation methods, Auger analysis, Rutherford backscattering spectrometry analysis, and Schottky barrier measurement, it was found that the NbN/GaAs interface remained stable after rapid thermal annealing at 900 °C for 10 s for NbN films prepared with 2 and 5% N 2 in the gas mixture.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
